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| inchange semiconductor product specification silicon pnp power transistors 2SB1606 description ? with to-220f package ? large collector current i c ? low collector saturation voltage. ? good linearity of h fe applications ? for power switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -130 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -7 v i c collector current -5 a i cm collector current-peak -10 a t c =25 ?? 40 p c collector dissipation 2 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 2SB1606 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma ; i b =0 -80 v v cesat collector-emitter saturation voltage i c =-4a ; i b =-0.2a -0.5 v v besat base-emitter saturation voltage i c =-4a ; i b =-0.2a -1.5 v i cbo collector cut-off current v cb =-100v;i e =0 -10 | a i ebo emitter cut-off current v eb =-5v;i c =0 -50 | a h fe-1 dc current gain i c =-0.1a ; v ce =-2v 45 h fe-2 dc current gain i c =-2a ; v ce =-2v 90 260 f t transition frequency i c =-0.5a ; v ce =-10v;f=10mhz 30 mhz switching times t on turn-on time 0.13 | s t stg storage time 0.5 | s t f fall time i c =-2a; i b1 =-i b2 =-0.2a 0.13 | s ? h fe-2 classifications q p 90-180 130-260 inchange semiconductor product specification 3 silicon pnp power transistors 2SB1606 package outline fig.2 outline dimensions inchange semiconductor product specification 4 silicon pnp power transistors 2SB1606 |
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